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NTC Started 50nm Production, Scheduled to Start 40nm in 2H’10 |
| 10/21/2009 |
Taoyuan, Taiwan October 21st, 2009 – Nanya Technology Corporation, (TAIEX: 2408), today announced its results of the third quarter, ended on September 30, 2009. Nanya’s revenue is NTD 11,509 million, an increase of 42 percent compared to the second quarter in 2009. Operating loss in the quarter has been significantly reduced to NTD 2,807 million from NTD 5,232 million in the previous quarter. Net loss is NTD 3,888 million, improved 41 percent, in the third quarter, mainly due to 35 percent increase in DRAM ASP quarter-over-quarters. All numbers are unaudited.
The board of Nanya Technology Corporation had approved, on September 24, 2009, a proposal to issue 800 million new common shares at a tentative price of NTD 16 per share, for a total amount around NTD 12.8billion. The fund will be used for the purchase of new equipments (NTD 7.52 billion), and the payback of the corporate bonds (NTD 5.28 billion). The company will also secure an NTD 18 billion syndicated loan in November of 2009. The fund is mainly for the upgrade of the 50nm stack technology transition, and the development of the advanced DRAM technologies to ensure the company’s competitiveness in DRAM Industry.
The technology migration from trench to stack in Nanya’s 12 inch fab has been successfully completed in early October, ending wafer starts in 70nm trench technology. Meanwhile, the pilot run of 50nm stack technology has been demonstrated successfully. The conversion to 50nm is scheduled to complete in the second quarter of 2010, achieving 50 percent cost down compared to the 70nm trench technology. Furthermore, the joint development of 40nm stack technology between Nanya Technology and Micron Technology is progressing well for a production scheduled in the second half of 2010, with another 30 percent die cost reduction.
The increasing PC demand and the DDR2-DDR3 transition drove up DRAM demand, leading to a DRAM market recovery. To meet this demand, Nanya Technology will focus on DDR3 products, while DDR2 capacity decreases gradually. Nanya plans to increase its DDR3 capacity to 40 percent of the combined production at Nanya and Inotera Memories at the end of the forth quarter, 2009. The DDR3 capacity is expected to exceed 50 percent in the first quarter of 2010.
3Q’09 Income Statement
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3Q'09
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2Q'09
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QoQ
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3Q'08
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YoY
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Million NT$
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Unaudited
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Audited
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Audited
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Net Sales
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11,509
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100%
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8,085
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100%
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+42%
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11,504
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100%
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+0%
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Cost of Goods Sold
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12,978
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113%
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11,882
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147%
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15,792
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137%
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Gross Margin
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-1,469
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-13%
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-3,797
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-47%
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+61%
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-4,288
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-37%
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+66%
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SG&A Expenses
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531
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5%
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604
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7%
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583
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5%
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R&D Expenses
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807
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7%
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831
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10%
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1,800
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16%
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Operating Income
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-2,807
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-24%
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-5,232
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-65%
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+46%
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-6,671
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-58%
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+58%
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Non-operating Income (Exp.)
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-1,081
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-9%
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-1,309
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-16%
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-2,098
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-18%
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Income before Tax
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-3,888
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-34%
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-6,541
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-81%
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+41%
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-8,769
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-76%
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+56%
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Income Tax Expense
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0
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0%
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0
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0%
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0
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0%
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Net Income
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-3,888
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-34%
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-6,541
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-81%
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+41%
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-8,769
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-76%
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+56%
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Note 1: “+” indicates improvement in 3Q’09, while “-” indicates the opposite.
About Nanya
Nanya Technology Corporation, a member of the Formosa Plastics Group, is a global leader in advanced memory semiconductors, focusing on research and development, design, manufacturing, and sales of DRAM products. NTC’s common stock is traded on the Taiwan Stock Exchange Corporation (TSEC) under the 2408 symbol. The company currently owns both 200mm fabrication facilities and 300mm fabrication facility in Taiwan. The company currently owns two 200mm fabrication facilities and one 300mm fabrication facility in Taiwan. The company also has a 300mm joint venture, Inotera Memories, Inc., which operates two 300mm fabrication facilities in Taiwan. Further information is available at http://www.nanya.com
Contact persons:
Spokesperson
Press Contact
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